Macom gan on silicon

Macom gan on silicon. May 9, 2016 · Lowell, Massachusetts, May 9, 2016–MACOM Technology Solutions Inc. Our amplifier gain blocks cover frequencies ranging from DC to 45 GHz. 4 GHz 11 MACOM Technology Solutions Inc. 0 mm plastic package. (MACOM), a leading supplier of semiconductor products today announced the release of its new GaN Product Model Library with the support of Modelithics, Inc. (“MACOM”), a leading supplier of semiconductor products, today announced that it has been awarded a contract from the United States Air Force Research Laboratory (“AFRL”) to develop advanced semiconductor process technology related to Gallium Nitride-on-Silicon Carbide (“GaN-on-SiC”). " MACOM purchased Nitronex from GaAs Labs, LLC for approximately $26 million in cash, subject to potential post-closing Custom MMIC and Lightwave Solutions. (“MACOM”), a leading supplier of high performance RF, microwave, millimeterwave and photonic semiconductor products today, announced a GaN bias controller and sequencer for fixed and pulsed negative gate biasing. The device supports both CW and pulsed operation with output power levels of at least 65 W (48. Visit www. Feb 13, 2014 · I believe MACOM's more than 30 years of experience in high performance RF power devices can help propel GaN-on-Silicon to the next level of commercialization, bringing it to a truly mainstream volume production technology. The device supports pulsed operation with output power levels of 7000 W (68. MACOM has achieved certification to the IATF16949 automotive standard, the ISO9001 international quality standard and the ISO14001 environmental management standard. 5 x 7. Our MACOM PURE CARBIDE series of GaN-on-SiC power amplifiers offers high performance and reliability for the most demanding applications. ("MACOM") (NASDAQ: MTSI), a leading supplier of high performance analog RF, microwave, and optical semiconductor products, today announced the new Feb 6, 2018 · “This agreement punctuates our long journey of leading the RF industry’s conversion to GaN on Silicon technology. (“MACOM”), a leading supplier of semiconductor solutions, has expanded its GaN-on-Si power amplifier portfolio with the introduction of its new MAMG-100227-010 broadband PA module optimized for use in land mobile radio (LMR) systems, wireless public safety Aug 22, 2023 · DURHAM, N. As a first step in its licensing program, MACOM will license to IQE the ability to produce GaN-on-silicon wafers utilising MACOM’s patent-protected technology. MACOM Pure Carbide, GaN Amplifier 150 V, 7000 W, 960 - 1215 MHz The MAPC-A1605 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for 960 - 1215 MHz frequency operation. At MACOM we offer a complete line of RF and microwave limiters, LNA/limiters and limiting amplifiers up to 18 GHz. The business services a broad customer base of leading aerospace, defense, industrial and telecommunications customers and most recently generated annualized revenues of Aug 5, 2020 · “GaN on Silicon Carbide is a compelling technology and we are excited to begin offering our customers both standard and custom MACOM PURE CARBIDE™ power amplifier solutions. The portfolio of products below are offered as bare die, tabbed and At MACOM we offer a broad range of silicon bipolar transistor products designed for applications ranging from DC to 3. The switch features enhanced AlGaAs anodes which are formed using MACOM’s patented heterojunction technology. Sep 8, 2015 · MACOM's GaN on Si is a unique and proprietary RF semiconductor process that brings together the best features of Gallium Arsenide, GaN-on-Silicon Carbide, and LDMOS in a low cost and scalable manufacturing flow. (“MACOM”) (NASDAQ: MTSI), a leading supplier of high performance analog RF, microwave, and optical semiconductor products, today announced the new NPT2024, a wideband transistor optimized for DC-2. These technologies allow the delivery of MMIC solutions covering DC to 110GHz. Minimizes power consumption and link latency. 2 - 1. MACOM’s MA4AGSW8-1 is an Aluminum-Gallium- Arsenide, single pole, eight throw (SP8T), PIN diode switch. Apr 1, 2015 · Lowell, Mass, April 1, 2015 – M/A-COM Technology Solutions Holdings Inc. 5 dBm) and in an air cavity ceramic package. Nov 1, 2017 · LOWELL, Mass. Ku-Band. To keep up with the rapid advancements in Sep 9, 2015 · MACOM's New MAGX-100027-100C0P Features Optimal Efficiency and Gain Performance LOWELL, Mass. The MAPC-A1507 is a GaN on Silicon Carbide HEMT D-mode amplifier suitable for 900 - 930 MHz frequency operation. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die. The device supports both CW and pulsed operation with minimum output power levels of 25 W (44 dBm) in a 6. 7 GHz - MACOM PURE CARBIDE The MAPC-A1103 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 2. 7, 2021-- MACOM Technology Solutions Inc. May 3, 2018 · GaN-on-Si’s performance advantages over LDMOS are firmly established – it can deliver over 70% power efficiency, and upward of 4X to 6X more power per unit area, with scalability to high frequencies. 3 dBm) in an air cavity ceramic package. Aerospace & Defense. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, will showcase its industry leading GaN on Silicon portfolio and other high-performance products at IEEE’s International Microwave Symposium (IMS) 2016 in San Francisco, California, May 24 - 26. (“MACOM”) will showcase the industry’s broadest and most advanced RF product and technology portfolio optimized for civil and defense radar, public and military radios and satellite communication applications at IRSI, December 14 th – 16 th at the Nimhans Convention Center in Bangalore, India, Booth #B6. 25, 2019-- MACOM Technology Solutions Holdings, Inc. Feb 8, 2018 · MACOM Technology Solutions; Request full-text PDF. Feb 6, 2018 · ST licenses MACOM's technology to supply GaN on Silicon RF power products. Daly, President and Chief Executive Officer, MACOM. Nov 3, 2016 · The Court’s October 31, 2016 decision (i) confirmed MACOM’s continuing exclusive rights in certain GaN-on-Si RF fields under a 2010 License Agreement entered into between Nitronex (acquired by MACOM in 2014) and International Rectifier (acquired by Infineon in 2015); (ii) ruled that MACOM is likely to succeed on its claim that Infineon’s Feb 25, 2019 · This builds upon the broad GaN-on-Silicon agreement between MACOM and ST announced in early 2018. May 20, 2015 · Lowell, Mass, May 20, 2015–M/A-COM Technology Solutions Inc. GaN Amplifier 50 V, 150 W DC - 3. 7 GHz Rev. ("MACOM"), will showcase its industry leading Gallium Nitride-on-Silicon (GaN-on-Si) portfolio and other high-performance MMIC and Diode products at EuMW 2017 in Nürnberg, Germany , October 10 - 12, in Booth #200. , July 19, 2023 – MACOM Technology Solutions Inc. (“MACOM”) (NASDAQ: MTSI), a leading supplier of high-performance analog, RF, microwave, millimeterwave and photonic semiconductor products, announced that it has shipped more than one million GaN-on-Silicon (GaN on Si) RF power devices to date to customers for use in communications, military and other RF applications. Satellite Communications. In parallel, comprehensive testing data has affirmed GaN-on-Si’s ability to conform to stringent reliability requirements, and to replicate Apr 30, 2014 · Lowell, Mass. 22, 2019-- MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. V7 MACOM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, today announced the new NPT2022, a wideband transistor optimized for DC-2 GHz operation and built using a proprietary Gallium Nitride (GaN) on Silicon (Si) process. We offer custom solutions using our in-house proprietary semiconductor technologies including Silicon, GaAs, GaN, InP and AlGaAs. macom. “Our collaboration with ST is an important part of our RF Power strategy and I am confident that we can win market share in targeted applications where the Jul 19, 2023 · LOWELL, Mass. Feb 22, 2016 · Leveraging MACOM's Gen4 GaN technology, the new MAGb series is the industry's first commercial basestation-optimized family of GaN transistors to achieve leadership efficiency, bandwidth and power gain with a linearity and cost structure like LDMOS, and a path to better than LDMOS cost at scaled volume production levels. Data Sheet Get a Sample Order Now Get a Quote Tech May 13, 2022 · “Together, we continue to make good progress in moving the GaN-on-Si technology towards commercialization and high-volume production,” said Stephen G. 5 GHz. The MAPC-A2021 is a GaN on Silicon Carbide HEMT D-mode amplifier suitable for applications 1W average power and optimized for 1. com. (“ST”) today announced the 2019 expansion of 150mm GaN-on-Silicon production capacity in ST’s fabs , and 200mm as demand requires. 1 GHz frequency operation. 5 dB of power gain and 63% efficiency. Using the latest technology available in the industry GaN Amplifier 50 V, 150 W, DC - 3. Our PIN limiter diodes are available in die form, plastic and ceramic packaging. 5 GHz frequency operation. --(BUSINESS WIRE)-- M/A-COM Technology Solutions Inc. We encourage customers to team with MACOM to design, assemble and test single or multifunction integrated circuit solutions. Mar 5, 2019 · MACOM’s L-PIC technology solves the remaining key challenge of aligning lasers to the silicon PIC. The device supports pulsed, and linear operation with peak output power levels to 8 W (39 dBm) in an 4 mm surface mount QFN package. (NYSE: WOLF) today announced that Wolfspeed has entered into a definitive agreement to sell its radio frequency business (Wolfspeed RF) to MACOM May 13, 2022 · STMicroelectronics and Macom Technology Solutions have announced prototypes on their fledgling RF GaN-on-Si process, which the companies aim to pitch against RF LDMOS (laterally-diffused metal-oxide semiconductor) for RF power amplifiers, and as lower-cost alternative to RF GaN-on-SiC (silicon carbide). The expansion is designed to service the worldwide 5G Telecom buildout. About Wolfspeed. LOWELL, Mass. The MAPC-A2002 is a high power GaN on Silicon Carbide HEMT D-mode amplifier designed for base station applications and optimized for 3. Limiters. The device supports pulsed and linear operation with peak output power levels to 50 W (47 dBm) in a 7. We offer the RF GaN Amplifier 28 V, 4 W, DC - 6 GHz. Data Sheet Get a Sample Order Now Get a Quote MACOM has completed its acquisition of the radio frequency business (the RF Business) of Wolfspeed, Inc. “The RF team’s engineering capabilities, technology and products are a perfect fit to MACOM and our strategy. (“MACOM”) today announced its new MAGM series of GaN-on-Si-based MMIC power amplifiers (“PAs") optimized for massive MIMO antenna systems targeted for 5G wireless basestation infrastructure. Our silicon bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. The device supports both CW and pulsed operation with output power levels of at least 270 W (54. The devices provide a typical 17 W of peak output power with 15. We will help you every step of the way to ensure your MACOM Acquired Wolfspeeds RF Products. leverages MACOM’s more than 60-year heritage of providing best-in-class standard, application specific, and custom solutions for: radar, electronic warfare, ISM, RF energy, and wireless communications customers. 1 dBm) in an air cavity ceramic package. Demonstrable interoperability. 75 dBm) in an air cavity ceramic package. Aug 6, 2020 · “GaN on Silicon Carbide is a compelling technology and we are excited to begin offering our customers both standard and custom MACOM PURE CARBIDE™ power amplifier solutions. --(BUSINESS WIRE)--Jun. These products use the latest thin-film hybrid manufacturing techniques to obtain the highest levels of performance, repeatability, reliability and cost-effectiveness. 7 GHz and is housed in a surface mount plastic package. 45 dBm) at 150V in an air cavity ceramic package. C-Band. Feb 26, 2018 · Lowell, Massachusetts, February 26, 2018 – MACOM Technology Solutions Inc. “GaN can offer superior RF May 20, 2015 · MACOM's NPT2022 Supports CW, Pulsed and Linear Operation Up to 100 W. General Purpose Broadband 50 V. 0 GHz modulated signal operation. MACOM’s portfolio of cost-effective RF power products uses our unique GaN on Silicon technology to deliver the At MACOM we design, manufacture, and support a wide portfolio of Amplifier Gain Blocks for RF, microwave, and millimeter wave applications. --(BUSINESS WIRE)-- MACOM Technology Solutions Inc. Our ceramic packaged diode series is ideal for waveguide, coaxial, and surface mount applications, while our die diode series is MACOM’s European Semiconductor Center offers a comprehensive portfolio of MMIC products fabricated on high performance gallium nitride-on-silicon (GaN-on-Si) and gallium arsenide (GaAs) processes. GaN路线之争再起波澜. The device has been designed for saturated and linear operation with output power levels of 4 W (36 dBm) in an industry standard, low inductance, surface Mar 31, 2014 · Agreement with IQE enables MACOM to deliver GaN performance at 8” silicon cost structure. MAPC-A1505. MACOM’s Gen4 GaN performance will be on Jun 7, 2021 · LOWELL, Mass. Our all-gold metallization fabrication processes ensure high performance Aug 22, 2023 · The RF Business includes a portfolio of Gallium Nitride ("GaN") on Silicon Carbide ("SiC") products used in high performance RF and microwave applications. This builds upon the broad GaN-on-Silicon agreement between MACOM and ST announced in early 2018. GaN Amplifier 50 V, 700 W 2. For further information and support please visit: Sep 8, 2015 · Swing by MACOM's Booth #235 at EuMW 2015 in Paris, France to learn more about our GaN offering. & GENEVA--(BUSINESS WIRE)--Feb. As 5G and 6G technologies are being developed, they are proving to represent a significant challenge for the underlying circuitry and hardware. Aug 5, 2020 · “GaN on Silicon Carbide is a compelling technology and we are excited to begin offering our customers both standard and custom MACOM PURE CARBIDE™ power amplifier solutions. General Purpose Broadband 28 V. We provide industry-leading solutions for efficient energy consumption and GaN Amplifier 50 V, 500 W 1. Lowell, Mass. 5 mm DFN package. The MAGX-011086A is a GaN on silicon HEMT amplifier optimized for DC - 6 GHz operation in a user friendly package ideal for high bandwidth applications. Leveraging MACOM’s patented Etched Facet Technology (EFT) lasers and a patented Self-Alignment EFT (SAEFT TM) process, MACOM’s lasers are aligned and attached directly to the silicon photonics die with high speed and high coupling efficiency Aug 6, 2020 · “GaN on Silicon Carbide is a compelling technology and we are excited to begin offering our customers both standard and custom MACOM PURE CARBIDE™ power amplifier solutions. ” Dec 5, 2023 · Further, Wolfspeed's RF business offers a portfolio of Gallium Nitride (GaN) on Silicon Carbide products. Our series of GaN-on-SiC power amplifiers is our most recent addition and offers high performance and reliability for the most demanding applications. 半导体行业观察. 7 - 3. The device also boasts very high breakdown voltages, which allows for reliable and stable Aug 22, 2023 · MACOM Technology Solutions Holdings, Inc. 5 GHz - MACOM PURE CARBIDE The MAPC-A1100 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 3. (NASDAQ: MTSI) ("MACOM"), a leading supplier of high MACOM GaN RF power amplifier solutions are designed with the latest GaN-on-SiC and GaN-on-Si technologies. ("MACOM") will showcase the industry's broadest and most advanced RF product and technology portfolio optimized for civil and defense radar, public and military radios and satellite communication applications at IRSI, December 14 th - 16 th at the Nimhans Convention Center in Bangalore, India, Booth #B6. com for additional data sheets and product information. V4 MACOM Technology Solutions Inc. The device supports both pulsed and CW operation with minimum output power levels of 1400 W (61. (“MACOM”), a leading supplier of high performance RF, microwave and millimeter wave products, today announced the immediate availability and full technical support for 17 high-performance gallium nitride on silicon (GaN on Si) RF power transistors and amplifiers recently added to the MACOM product portfolio as a result of May 13, 2022 · “Commercializing RF GaN-on-Silicon products are the next big milestone in our collaboration with MACOM and with continued progress, we look forward to fully realizing the potential of this Jul 21, 2023 · MACOM Technology Solutions (“MACOM”), a supplier of semiconductor products, announced that it has been awarded a contract from the United States Air Force Research Laboratory (“AFRL”) to develop advanced semiconductor process technology related to Gallium Nitride-on-Silicon Carbide (“GaN-on-SiC”). , March 31st, 2014-M/A-COM Technology Solutions Inc. --(BUSINESS WIRE)-- M/A-COM Technology Solutions Inc. 专注半导体和硬科技产业，实时、专业、原创、深度. For further information and support please visit: LPO Solution Benefits. Gallium Nitride (GaN) MACOM is driving the commercialization of GaN into mainstream RF Power applications designing solutions with GaN-on-Si and GaN-on-SiC. General Purpose Broadband 40 V. ("MACOM"), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, today announced the new NPT2022, a wideband transistor optimized for DC-2 GHz operation and built using a proprietary Gallium Nitride (GaN) on Silicon MACOM serves customers with a broad product portfolio that incorporates RF, Microwave, Analog and Mixed Signal and Optical semiconductor technologies. --(BUSINESS WIRE)-- MACOM Technology Solutions Inc. This GaN on Si HEMT D-Mode transistor is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L/S-band radar. Simplifies design with a pluggable module interface. 7 GHz operation and built using proprietary 4th generation GaN on Silicon (GaN on Si) process is sampling today. GaN Amplifier 50 V, 85 W DC - 3. . --(BUSINESS WIRE)--Jan. Supports multiple optical technologies including VCSEL, Silicon Photonics, EML, and TFLN. Press Release Learn More. ("MACOM"), will showcase the industry's broadest and most advanced RF product and technology portfolio optimized for Industrial, Scientific, Medical, Point-to-Point Wireless and X-Band Radar at COMCAS, November 13 th - 14 th in Tel May 13, 2022 · “Commercializing RF GaN-on-Silicon products are the next big milestone in our collaboration with MACOM and with continued progress, we look forward to fully realizing the potential of this MACOM’s PIN limiter diodes provide excellent broadband performance from 1 MHz to 20 GHz and higher for receiver protector circuits. Anticipated breakthrough cost structure and power density of GaN on Silicon would enable 4G/LTE and massive MIMO 5G antennas. Aug 22, 2023 · MACOM operates facilities across the United States, Europe, Asia and is headquartered in Lowell, Massachusetts. AlGaAs PIN Diode. 5 GHz - MACOM PURE CARBIDE The MAPC-A1102 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for DC - 3. , August 22, 2023--Wolfspeed, Inc. MACOM,” stated Stephen G. Communications Infrastructure. The global rollout of 5G networks and move to Massive MIMO (M-MIMO) antenna configurations is expected to create a substantial increase in the demand for RF Power products. Providing wideband performance simultaneously covering bands 42 and 43 Feb 25, 2019 · Wafer supply expansion to enable cost, scale, and industrialization of GaN-on-Silicon for the global 5G network buildout Wide bandgap efficiency and gain to meet 5G antenna range and energy efficiency LOWELL, Mass. (“MACOM”) (NASDAQ: MTSI), a leading supplier of semiconductor products, today announced that it has entered into a definitive agreement through one of its French subsidiaries to acquire the assets and operations of OMMIC SAS (“OMMIC”), a semiconductor manufacturer with expertise in wafer fabrication Lowell, Massachusetts – January 25, 2021 – MACOM Technology Solutions Inc. To date, MACOM has refined and proven the merits of GaN on Silicon using rather modest compound semiconductor factories, replicating and even exceeding the RF performance and reliability of expensive GaN on SiC alternative Mar 31, 2014 · This move is expected to allow MACOM to deliver GaN RF products with breakthrough bandwidth and efficiency at mainstream 8-inch silicon cost structures. 0 x 6. The device supports pulsed operation with output power levels of 700 W (58. , April 30, 2014 – M/A-COM Technology Solutions Inc. To learn more visit www. 7 GHz modulated signal operation. GaN Amplifier 50 V, 25 W, 30 - 2700 MHz - MACOM PURE CARBIDE The MAPC-A1000 is a GaN on Silicon Carbide HEMT D-mode amplifier suitable for 30 - 2700 MHz frequency operation. 7 GHz operation using MACOM’s proprietary Gallium Nitride on Silicon (GaN on Si) process is sampling today. Sep 10, 2015 · Lowell, Mass, September 10, 2015–M/A-COM Technology Solutions Inc. 8 - 2. 100C0P, a wideband transistor optimized for DC-2. 来源：内容由半导体行业观察（ID：icbank）原创，作者：张健，谢谢。. To date, MACOM has refined and proven the merits of GaN on Silicon using MACOM Announces Availability of GaN Design Models to Accelerate Customer Design Cycle Time. May 13, 2022 · “Commercializing RF GaN-on-Silicon products are the next big milestone in our collaboration with MACOM and with continued progress, we look forward to fully realizing the potential of this Sep 8, 2015 · Lowell, Mass, September 8, 2015–M/A-COM Technology Solutions Inc. June 7, 2021– MACOM Technology Solutions Inc. MACOM remains well-poised to gain solid traction among high-performance RF and microwave GaN Amplifier 50 V, 65 W, DC - 3. ("MACOM"), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, today announced the new NPA1006, a Gallium Nitride (GaN) wideband power amplifier optimized for 20-1000 MHz operation. MACOM believes that establishing such large Aug 22, 2023 · The RF Business includes a portfolio of Gallium Nitride (“GaN”) on Silicon Carbide (“SiC”) products used in high performance RF and microwave applications. The design and development of GaN-on-Silicon structures and devices will be presented beginning with the basic material parameters, growth of Aug 25, 2014 · The MAGX-000035-015000 and MAGX-000035-01500S are gold-metalized unmatched GaN on Silicon Carbide RF power transistors optimized for a variety of RF power amplifier applications. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, today announced an IP licensing program for Gallium Nitride (GaN) on Silicon technology. C. MACOM partners with today’s leaders in Test and Measurement, SATCOM, Aerospace and Defense, Public Safety Radios Feb 2, 2023 · LOWELL, Mass. The agreement will enable MACOM to deliver GaN RF products with breakthrough bandwidth and efficiency at a mainstream 200mm silicon cost structure and will enable IQE to accelerate GaN SOI, and Silicon, MACOM’s heterogeneous semiconductor and packaging strategy ensures that high power GaN solutions 1 W SSPA, 71 – 86 GHz MAAP-011346-01W12A Sep 26, 2017 · LOWELL, Mass. (Modelithics). Data Sheet Get a Sample Order Now Get a Quote MACOM has established a European Semiconductor Center located near Paris in Limeil-Brévannes, France. Data Sheet Get a Sample Order Now Get a Quote Lowell, Massachusetts, November 30, 2017 – MACOM Technology Solutions Inc. AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes. 46 dBm) in an air cavity ceramic package. Under the contract, MACOM will Delivering performance that rivals expensive GaN on Silicon Carbide (GaN on SiC) at a projected volume production cost structure below that of incumbent LDMOS technology, fourth generation GaN (Gen4 GaN) is positioned to break the final technical and commercial barriers to mainstream GaN adoption. Wolfspeed (NYSE: WOLF) leads the market in the worldwide adoption of Silicon Carbide and GaN technologies. The MAGX-000025-150000 provides 150 W of output power with 18 dB of gain and 58% efficiency. The device supports both CW and pulsed operation with output power levels of at least 150 W (51. MACOM’s gain blocks are used in a variety of 50 Ohm and 75 Ohm applications including; Networks, Commercial and Aerospace and Defense. (“MACOM”), a leading supplier of semiconductor solutions, today announced that it has entered into a Cooperative Research and Development Agreement with the United States Air Force Research Laboratory (“AFRL”) regarding Gallium Nitride-on-Silicon Carbide (“GaN-on-SiC”) technology. The global rollout of 5G networks and move to Massive MIMO (M-MIMO) antenna configurations is Nov 30, 2017 · LOWELL, Mass. ” Customers, Products and Markets • Approximately $150M USD in annual revenue • Global customer base, served with direct and distribution sales May 19, 2015 · MACOM's NPA1006 is designed for Narrowband to Broadband Applications. Eliminates expensive discrete DSP from module. GaN Amplifier 50 V, 270 W DC - 2. The MAPC-A1505 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for 2. Further, MACOM announced that it is in active discussions to make GaN-on-Silicon technology available to select companies for use in RF applications. (Graphic: Business Wire) Jan 22, 2019 · LOWELL, Mass. , February 2, 2023 – MACOM Technology Solutions Holdings, Inc. MACOM is continually enhancing and expanding its MMIC power amplifier product portfolio to meet customers’ demanding technical challenges by leveraging state-of-the-art foundry technologies and proprietary in-house processes. The facility is dedicated to semiconductor technology development and fabrication of Monolithic Microwave Integrated Circuits (MMICs) to support the space, telecommunications and A&D markets and applications. 5 GHz Rev. Feb 27, 2019 · STMicroelectronics and MACOM Technology Solutions announced the 2019 expansion of 150mm GaN-on-Silicon production capacity in ST’s fabs, and 200mm as demand requires. For further information and support please visit: Aug 25, 2014 · The MAGX-000035-015000 and MAGX-000035-01500S are gold-metalized unmatched GaN on Silicon Carbide RF power transistors optimized for a variety of RF power amplifier applications. The addition of the RF Business’ engineering capabilities, portfolio of GaN products and process technologies and integrated design support position MACOM to better address our customers’ next-generation RF challenges. Feb 3, 2013 · The MAGX-000025-150000 is a gold-metalized unmatched GaN on Silicon Carbide RF power transistor optimized for a variety of RF power amplifier applications. 4 - 4. 凭借高功率、高频工作环境下的优良性能，氮化镓（GaN）正在快速崛起，无论是在功率，还是射频 Feb 6, 2018 · “This agreement punctuates our long journey of leading the RF industry’s conversion to GaN on Silicon technology. MACOM Technology Solutions has a continuing joint development efforts sponsored by the Department of Energy with MIT main campus and MIT Lincoln Laboratory to develop GaN on silicon three terminal high voltage/high current switching devices. For further information and support please visit: Silicon Bipolar; Silicon MOSFET; Solid State Power Amplifier Module (SSPA) RF Transimpedance Amplifiers; Variable Gain Amplifiers; GaN MMIC; Integrated ICs & Modules. ” GaN Amplifier 50 V, 270 W DC - 2. The easy-to-use May 16, 2022 · STMicroelectronics and MACOM announced the successful production of RF GaN-on-Silicon technology, hoping to solve GaN production challenges for RF components. The business services a broad cus • Gallium Nitride (GaN) on Silicon Carbide (SiC) product portfolio of 300+ products • Expertise in epitaxy, circuit design, semiconductor processing and packaging • 20+ years of GaN HEMT experience with over 50 million devices shipped • Design centers in Arizona, California and North Carolina Dec 4, 2023 · MACOM services over 6,000 customers annually with a broad product portfolio that incorporates RF, Microwave, Analog and Mixed Signal and Optical semiconductor technologies. Daly, MACOM President and CEO. ” The MAPC-A1000 is a high power GaN-on-SiC amplifier designed to operate between 30 MHz and 2. Feb 25, 2019 · This builds upon the broad GaN-on-Silicon agreement between MACOM and ST announced in early 2018. (“MACOM”) (NASDAQ: MTSI), a leading supplier of semiconductor products, today announced that it has entered (“GaN”) on Silicon Carbide (“SiC GaN Amplifier 50 V, 1400 W 900 - 930 MHz. 1 GHz. & GENEVA-- (BUSINESS WIRE)-- MACOM Technology Solutions Holdings, Inc. The MABC-001000-DP000L module provides proper gate 2 days ago · GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. Supports multiple link types. 7 GHz frequency operation. fa pt bw yv oy yq vo dn qp qz